Gallium Nitride Transistors - Future of the Semiconductors氮化镓晶体：半导体的未来
For many years power electronics designers have been living in an era where increases in performance of 5-10% are the norm, and 20% is outstanding. We have shown that GaN can provide a 70% power density improvement in a conventional topology by taking a typical eighth-brick design and boosting the power from 300W to over 500W in a fully regulated, hard switched design. Furthermore, we’ve shown that unregulated hard-switched designs can be pushed over 650W. What’s more – there is still room to grow.