Applications of Mono-crystalline GaN
姓名（Name）: Dr. Robert Dwiliński
University of Warsaw
Ammonothermal method for obtaining mono-crystalline gallium nitride (GaN.)
TheAmmonothermal method for obtaining mono-crystalline gallium nitride (GaN) is analogous to the well known industrial hydrothermal method of quartz (SiO2) production which results in production of tens of tons of synthetic quartz per year. Besides very well controlled growth of high quality GaN crystals on own GaNseeds the main advantages of this method are:
(1)low cost due to efficient conversion of raw materials into the product, relatively low pressure and temperature of the process as well as its automated supervision and
(2)scalability – the process in a small autoclave is the same as the process in a large autoclave, in which hundreds of seeds can be installed and grow simultaneously). It is the only method, which could deliver large size non-polar substrates capable of obtaining the efficiency close to the theoretical efficiency of GaN based semiconductors.